title: SiGe nanowires grown by LPCVD using Ga-Au catalysts
creator: Monasterio, Manuel
creator: Rodríguez Domínguez, Andrés
creator: Rodríguez Rodríguez, Tomás
creator: Ballesteros Pérez, Carmen Inés
subject: Physics
subject: Telecommunications
description: The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au
publisher: E.T.S.I. Telecomunicación (UPM)
rights: https://creativecommons.org/licenses/by-nc-nd/3.0/es/
date: 2011
type: info:eu-repo/semantics/conferenceObject
type: Presentation at Congress or Conference
source: Proceedings of Materials Research Society Symposium 2011 | Materials Research Society Symposium 2011 | 28/11/2011 - 02/12/2011 | Boston, EEUU
type: PeerReviewed
format: application/pdf
language: eng
rights: info:eu-repo/semantics/openAccess
relation: info:eu-repo/semantics/altIdentifier/doi/10.1557/opl.2012.34
identifier: https://oa.upm.es/13245/