%0 Conference Paper
%A Monasterio, Manuel
%A Rodríguez Domínguez, Andrés
%A Rodríguez Rodríguez, Tomás
%A Ballesteros Pérez, Carmen Inés
%B Materials Research Society Symposium 2011
%C Boston, EEUU
%D 2011
%F upm:13245
%I Cambridge Journals
%P 1-6
%R 10.1557/opl.2012.34
%T SiGe nanowires grown by LPCVD using Ga-Au catalysts
%U https://oa.upm.es/13245/
%V 1408
%X The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au