%B Proceedings of Materials Research Society Symposium 2011
%P 1-6
%R 10.1557/opl.2012.34
%T SiGe nanowires grown by LPCVD using Ga-Au catalysts
%X The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au
%I Cambridge Journals
%C UK
%A Manuel Monasterio
%A Andrés Rodríguez Domínguez
%A Tomás Rodríguez Rodríguez
%A Carmen Inés Ballesteros Pérez
%L upm13245
%D 2011
%V 1408