eprintid: 13245
rev_number: 18
eprint_status: archive
userid: 1903
dir: disk0/00/01/32/45
datestamp: 2012-11-28 12:51:54
lastmod: 2016-04-21 12:33:10
status_changed: 2012-11-28 12:51:54
type: conference_item
metadata_visibility: show
item_issues_count: 0
creators_name: Monasterio, Manuel
creators_name: Rodríguez Domínguez, Andrés
creators_name: Rodríguez Rodríguez, Tomás
creators_name: Ballesteros Pérez, Carmen Inés
title: SiGe nanowires grown by LPCVD using Ga-Au catalysts
ispublished: pub
subjects: fisica
subjects: telecomunicaciones
abstract: The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au
date: 2011
date_type: published
publisher: Cambridge Journals
id_number: 10.1557/opl.2012.34
full_text_status: public
pres_type: paper
volume: 1408
place_of_pub: UK
pagerange: 1-6
event_title: Materials Research Society Symposium 2011
event_location: Boston, EEUU
event_dates: 28/11/2011 - 02/12/2011
event_type: conference
institution: Telecomunicacion
department: Tecnologia_Electronica
refereed: TRUE
book_title: Proceedings of Materials Research Society Symposium 2011
rights: by-nc-nd
citation:   Monasterio, Manuel and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás and Ballesteros Pérez, Carmen Inés  (2011).  SiGe nanowires grown by LPCVD using Ga-Au catalysts.  In: "Materials Research Society Symposium 2011", 28/11/2011 - 02/12/2011, Boston, EEUU. pp. 1-6.   https://doi.org/10.1557/opl.2012.34 <https://doi.org/10.1557/opl.2012.34>. 
document_url: https://oa.upm.es/13245/2/INVE_MEM_2011_111080.pdf