eprintid: 16430 rev_number: 21 eprint_status: archive userid: 1903 dir: disk0/00/01/64/30 datestamp: 2013-07-15 18:37:05 lastmod: 2016-04-21 16:44:08 status_changed: 2013-07-15 18:37:05 type: article metadata_visibility: show item_issues_count: 0 creators_name: Anaya, J. creators_name: Torres, J. creators_name: Martin Martin, A. creators_name: Souto, J. creators_name: Jiménez, Juan creators_name: Rodríguez Domínguez, Andrés creators_name: Rodríguez Rodríguez, Tomás title: Study of the temperature distribution in Si nanowires under microscopic laser beam excitation ispublished: pub subjects: telecomunicaciones abstract: The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs. date: 2012-12 date_type: published publisher: Springer official_url: http://link.springer.com/article/10.1007/s00339-012-7509-y id_number: 10.1007/s00339-012-7509-y full_text_status: public publication: Applied Physics A institution: Telecomunicacion department: Tecnologia_Electronica refereed: TRUE issn: 0947-8396 rights: by-nc-nd citation: Anaya, J. and Torres, J. and Martin Martin, A. and Souto, J. and Jiménez, Juan and Rodríguez Domínguez, Andrés and Rodríguez Rodríguez, Tomás (2012). Study of the temperature distribution in Si nanowires under microscopic laser beam excitation. "Applied Physics A" ; ISSN 0947-8396. https://doi.org/10.1007/s00339-012-7509-y . document_url: https://oa.upm.es/16430/1/INVE_MEM_2012_133780.pdf