@inproceedings{upm26485,
       booktitle = {28th European Photovoltaic Solar Energy Conference and Exhibition},
            year = {2013},
           pages = {526--530},
             doi = {10.4229/28thEUPVSEC2013-1CV.6.1},
           title = {In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation},
             url = {https://oa.upm.es/26485/},
          author = {Yaccuzzi, E. and Barrig{\'o}n Monta{\~n}{\'e}s, Enrique and Rodr{\'i}guez, Sebasti{\'a}n and Ochoa G{\'o}mez, Mario and Barrera, M. and Espinet Gonz{\'a}lez, Pilar and Garc{\'i}a, Javier and Ibarra, M. L. and Socolovsky, H. and P{\'e}rez, M. D. and Giudici, P. and Alurralde, M. and Algora del Valle, Carlos and Rey-Stolle Prado, Ignacio and Pl{\'a}, J.},
        abstract = {In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.}
}