eprintid: 26485 rev_number: 17 eprint_status: archive userid: 1903 dir: disk0/00/02/64/85 datestamp: 2014-06-08 12:08:50 lastmod: 2014-09-22 11:41:33 status_changed: 2014-06-08 12:08:50 type: conference_item metadata_visibility: show item_issues_count: 0 creators_name: Yaccuzzi, E. creators_name: Barrigón Montañés, Enrique creators_name: Rodríguez, Sebastián creators_name: Ochoa Gómez, Mario creators_name: Barrera, M. creators_name: Espinet González, Pilar creators_name: García, Javier creators_name: Ibarra, M. L. creators_name: Socolovsky, H. creators_name: Pérez, M. D. creators_name: Giudici, P. creators_name: Alurralde, M. creators_name: Algora del Valle, Carlos creators_name: Rey-Stolle Prado, Ignacio creators_name: Plá, J. title: In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation ispublished: pub subjects: telecomunicaciones subjects: electronica abstract: In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity. date: 2013 date_type: published id_number: 10.4229/28thEUPVSEC2013-1CV.6.1 full_text_status: public pres_type: paper pagerange: 526-530 pages: 5 event_title: 28th European Photovoltaic Solar Energy Conference and Exhibition event_location: París, France event_dates: 30/09/2013 - 04/10/2013 event_type: conference institution: Ies department: Electronica2 refereed: TRUE book_title: 28th European Photovoltaic Solar Energy Conference and Exhibition rights: by-nc-nd citation: Yaccuzzi, E., Barrigón Montañés, Enrique, Rodríguez, Sebastián, Ochoa Gómez, Mario, Barrera, M., Espinet González, Pilar, García, Javier, Ibarra, M. L., Socolovsky, H., Pérez, M. D., Giudici, P., Alurralde, M., Algora del Valle, Carlos, Rey-Stolle Prado, Ignacio and Plá, J. (2013). In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation. In: "28th European Photovoltaic Solar Energy Conference and Exhibition", 30/09/2013 - 04/10/2013, París, France. pp. 526-530. https://doi.org/10.4229/28thEUPVSEC2013-1CV.6.1 . document_url: https://oa.upm.es/26485/1/INVE_MEM_2013_163956.pdf