TY  - CONF
TI  - Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell
ID  - upm50978
T2  - IEEE 44th Photovoltaic Specialist Conference (PVSC 2017)
SP  - 1
UR  - https://ieeexplore.ieee.org/document/8366250
AV  - public
PB  - IEEE
M2  - Washington, DC, USA
Y1  - 2017///
EP  - 5
N2  - A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell is observed to suffer about 15% Jsc drop and ~50 mV Voc loss at 1-sun, while the Voc of the GaNAsSb subcell drops by as much as ~ 140 mV. The degradation of the Ge and GaNAsSb subcells in the current-matched 4J structure can hinder its efficiency potential to a higher extent than in the GaInP/Ga(In)As/Ge 3J. Besides, high quality GaNAsSb and Ge subcells would still limit the current and require redesigning the top subcells to achieve optimum efficiencies
A1  - García Vara, Iván
A1  - Ochoa Gómez, Mario
A1  - Lombardero Hernández, Iván
A1  - Cifuentes Baro, Luis
A1  - Caño Fernández, Pablo
A1  - Hinojosa Arner, Manuel
A1  - Rey Llorente, Ignacio del
A1  - Algora del Valle, Carlos
A1  - Johnson, A.D.
A1  - Davies, J.I.
A1  - Tan, K.H.
A1  - Loke, W.K.
A1  - Wicaksono, S.
A1  - Yoon, S.F.
ER  -