TY - CONF TI - Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell ID - upm50978 T2 - IEEE 44th Photovoltaic Specialist Conference (PVSC 2017) SP - 1 UR - https://ieeexplore.ieee.org/document/8366250 AV - public PB - IEEE M2 - Washington, DC, USA Y1 - 2017/// EP - 5 N2 - A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell is observed to suffer about 15% Jsc drop and ~50 mV Voc loss at 1-sun, while the Voc of the GaNAsSb subcell drops by as much as ~ 140 mV. The degradation of the Ge and GaNAsSb subcells in the current-matched 4J structure can hinder its efficiency potential to a higher extent than in the GaInP/Ga(In)As/Ge 3J. Besides, high quality GaNAsSb and Ge subcells would still limit the current and require redesigning the top subcells to achieve optimum efficiencies A1 - García Vara, Iván A1 - Ochoa Gómez, Mario A1 - Lombardero Hernández, Iván A1 - Cifuentes Baro, Luis A1 - Caño Fernández, Pablo A1 - Hinojosa Arner, Manuel A1 - Rey Llorente, Ignacio del A1 - Algora del Valle, Carlos A1 - Johnson, A.D. A1 - Davies, J.I. A1 - Tan, K.H. A1 - Loke, W.K. A1 - Wicaksono, S. A1 - Yoon, S.F. ER -