eprintid: 50978 rev_number: 14 eprint_status: archive userid: 1903 dir: disk0/00/05/09/78 datestamp: 2019-04-10 15:20:38 lastmod: 2019-04-10 15:20:38 status_changed: 2019-04-10 15:20:38 type: conference_item metadata_visibility: show creators_name: García Vara, Iván creators_name: Ochoa Gómez, Mario creators_name: Lombardero Hernández, Iván creators_name: Cifuentes Baro, Luis creators_name: Caño Fernández, Pablo creators_name: Hinojosa Arner, Manuel creators_name: Rey Llorente, Ignacio del creators_name: Algora del Valle, Carlos creators_name: Johnson, A.D. creators_name: Davies, J.I. creators_name: Tan, K.H. creators_name: Loke, W.K. creators_name: Wicaksono, S. creators_name: Yoon, S.F. creators_id: igarcia@ies-def.upm.es creators_id: pablo.cano@ies-def.upm.es creators_id: ignacio.delrey@upm.es title: Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell publisher: IEEE rights: by-nc-nd ispublished: pub subjects: electronica subjects: fisica subjects: telecomunicaciones full_text_status: public pres_type: paper abstract: A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell is observed to suffer about 15% Jsc drop and ~50 mV Voc loss at 1-sun, while the Voc of the GaNAsSb subcell drops by as much as ~ 140 mV. The degradation of the Ge and GaNAsSb subcells in the current-matched 4J structure can hinder its efficiency potential to a higher extent than in the GaInP/Ga(In)As/Ge 3J. Besides, high quality GaNAsSb and Ge subcells would still limit the current and require redesigning the top subcells to achieve optimum efficiencies date_type: published date: 2017 pagerange: 1-5 event_title: IEEE 44th Photovoltaic Specialist Conference (PVSC 2017) event_location: Washington, DC, USA event_dates: 25/06/2017 - 30/06/2017 event_type: conference id_number: 10.1109/PVSC.2017.8366250 institution: Telecomunicacion department: Electronica2 refereed: TRUE book_title: IEEE 44th Photovoltaic Specialist Conference (PVSC 2017) official_url: https://ieeexplore.ieee.org/document/8366250 comprojects_type: FP7 comprojects_type: MINECO comprojects_type: CM comprojects_type: MINECO comprojects_code: 607153 comprojects_code: TEC2014-54260-C3-1-P comprojects_code: S2013/MAE-2780 comprojects_code: PCIN-2015-181-C02-02 comprojects_acronym: LONGESST comprojects_leader: IQE plc comprojects_title: Low Cost Germanium Substrates for Next Generation 4-Junction Space Solar Cells Utilising Dilute Nitride Technology citation: García Vara, Iván and Ochoa Gómez, Mario and Lombardero Hernández, Iván and Cifuentes Baro, Luis and Caño Fernández, Pablo and Hinojosa Arner, Manuel and Rey Llorente, Ignacio del and Algora del Valle, Carlos and Johnson, A.D. and Davies, J.I. and Tan, K.H. and Loke, W.K. and Wicaksono, S. and Yoon, S.F. (2017). Component integration effects in 4-junction solar cells with dilute nitride 1eV subcell. In: "IEEE 44th Photovoltaic Specialist Conference (PVSC 2017)", 25/06/2017 - 30/06/2017, Washington, DC, USA. pp. 1-5. https://doi.org/10.1109/PVSC.2017.8366250 . document_url: http://oa.upm.es/50978/1/INVE_MEM_2017_276860.pdf