RT Conference Proceedings
SR 00
A1 Sánchez Noriega, Kefrén
A1 Aguilera Bonet, Irene
A1 Palacios Clemente, Pablo
A1 Wahnón Benarroch, Perla
T1 First-principles properties of an intermediate band material based on Ti-implanted silicon
YR 2009
FD 21-25 Sept 2009
SP 559
OP 563
K1 Intermediate Band, Silicon, Quantum Calculation
AB A first-principles study is aimed to reveal the properties of a crystalline Ti-implanted Si compound  obtained experimentally with a Ti concentration clearly above the corresponding equilibrium solubility limit and  high enough to be capable of presenting an electronic intermediate band brought about by Ti 3d electrons instead of  the well-known impurity levels structure. Interstitial, substitutional and other Ti implantation processes are  considered, as well as several possible mixtures of them, in order to clarify the origin of a donor-kind transition  observed experimentally at about 0.36 eV. Also the possibility of obtaining an intermediate band from the studied  compound is considered. When convenient, calculations of magnetic and optical properties were carried out to help  to identify this potential intermediate band material.
T2 24th European Photovoltaic Solar Energy Conference
ED Hamburgo, Alemania
SN 3-936338-25-6
AV Published
LK https://oa.upm.es/62837/