%0 Conference Paper
%A Zehender, Marius Harry
%A García Vara, Iván
%A Svatek, Simon Aurel
%A Steiner, Myles A.
%A García Linares, Pablo
%A Warren, Emily
%A Tamboli, Adele
%A Martí Vega, Antonio
%A Antolín Fernández, Elisa
%B 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
%C Chicago, IL, USA
%D 2019
%F upm:64911
%I IEEE
%K Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide
%P 35-40
%T Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
%U http://oa.upm.es/64911/
%X The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.