TY - CONF A1 - Zehender, Marius Harry A1 - García Vara, Iván A1 - Svatek, Simon Aurel A1 - Steiner, Myles A. A1 - García Linares, Pablo A1 - Warren, Emily A1 - Tamboli, Adele A1 - Martí Vega, Antonio A1 - Antolín Fernández, Elisa N2 - The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells. Y1 - 2019/// PB - IEEE M2 - Chicago, IL, USA KW - Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide EP - 40 SP - 35 AV - public UR - https://ieeexplore.ieee.org/document/8980563 ID - upm64911 T2 - 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) TI - Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell ER -