TY  - CONF
SP  - 35
KW  - Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide
ID  - upm64911
PB  - IEEE
Y1  - 2019///
EP  - 40
TI  - Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
AV  - public
N2  - The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.
UR  - https://ieeexplore.ieee.org/document/8980563
T2  - 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
M2  - Chicago, IL, USA
A1  - Zehender, Marius Harry
A1  - García Vara, Iván
A1  - Svatek, Simon Aurel
A1  - Steiner, Myles A.
A1  - García Linares, Pablo
A1  - Warren, Emily
A1  - Tamboli, Adele
A1  - Martí Vega, Antonio
A1  - Antolín Fernández, Elisa
ER  -