RT Conference Proceedings
SR 00
ID 10.1109/PVSC40753.2019.8980563
A1 Zehender, Marius Harry
A1 García Vara, Iván
A1 Svatek, Simon Aurel
A1 Steiner, Myles A.
A1 García Linares, Pablo
A1 Warren, Emily
A1 Tamboli, Adele
A1 Martí Vega, Antonio
A1 Antolín Fernández, Elisa
T1 Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
YR 2019
FD 16/06/2019 - 21/06/2019
SP 35
OP 40
K1 Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide
AB The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.
T2 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
ED Chicago, IL, USA
AV Published
LK http://oa.upm.es/64911/
UL https://ieeexplore.ieee.org/document/8980563