%X The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.
%B 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
%P 35-40
%C Chicago, IL, USA
%I IEEE
%A Marius Harry Zehender
%A Iván García Vara
%A Simon Aurel Svatek
%A Myles A. Steiner
%A Pablo García Linares
%A Emily Warren
%A Adele Tamboli
%A Antonio Martí Vega
%A Elisa Antolín Fernández
%T Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
%K Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide
%L upm64911
%D 2019
%R 10.1109/PVSC40753.2019.8980563