eprintid: 64911
rev_number: 21
eprint_status: archive
userid: 1903
dir: disk0/00/06/49/11
datestamp: 2021-04-20 14:21:27
lastmod: 2021-04-20 14:21:27
status_changed: 2021-04-20 14:21:27
type: conference_item
metadata_visibility: show
creators_name: Zehender, Marius Harry
creators_name: García Vara, Iván
creators_name: Svatek, Simon Aurel
creators_name: Steiner, Myles A.
creators_name: García Linares, Pablo
creators_name: Warren, Emily
creators_name: Tamboli, Adele
creators_name: Martí Vega, Antonio
creators_name: Antolín Fernández, Elisa
creators_id: igarcia@ies-def.upm.es
creators_id: antonio.marti@upm.es
creators_id: elisa.antolin@upm.es
title: Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
publisher: IEEE
rights: by-nc-nd
ispublished: pub
subjects: quimica
subjects: electrica
full_text_status: public
pres_type: paper
keywords: Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide
abstract: The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.
date_type: published
date: 2019
pagerange: 35-40
event_title: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
event_location: Chicago, IL, USA
event_dates: 16/06/2019 - 21/06/2019
event_type: conference
id_number: 10.1109/PVSC40753.2019.8980563
institution: Ies
department: Electronica3
refereed: TRUE
book_title: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
official_url: https://ieeexplore.ieee.org/document/8980563
comprojects_type: CM
comprojects_type: UPM
comprojects_type: UPM
comprojects_type: MINECO
comprojects_type: MINECO
comprojects_code: S2018/EMT-4308
comprojects_code: RYC-2014-15621
comprojects_code: RYC-2015-18539
comprojects_acronym: MADRID-PV2-CM
comprojects_title: Materiales, dispositivos y tecnologías para el desarrollo de la industria fotovoltaica
comprojects_title: Programa Propio para Ayudas para Fortalecer Planes de Investigación
comprojects_title: Programa Propio para Ayudas Predoctorales dela UPM
citation:   Zehender, Marius Harry and García Vara, Iván and Svatek, Simon Aurel and Steiner, Myles A. and García Linares, Pablo and Warren, Emily and Tamboli, Adele and Martí Vega, Antonio and Antolín Fernández, Elisa  (2019).  Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell.  In: "2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)", 16/06/2019 - 21/06/2019, Chicago, IL, USA. pp. 35-40.   https://doi.org/10.1109/PVSC40753.2019.8980563 <https://doi.org/10.1109/PVSC40753.2019.8980563>. 
document_url: http://oa.upm.es/64911/1/INVE_MEM_2019_322310.pdf