eprintid: 64911 rev_number: 21 eprint_status: archive userid: 1903 dir: disk0/00/06/49/11 datestamp: 2021-04-20 14:21:27 lastmod: 2021-04-20 14:21:27 status_changed: 2021-04-20 14:21:27 type: conference_item metadata_visibility: show creators_name: Zehender, Marius Harry creators_name: García Vara, Iván creators_name: Svatek, Simon Aurel creators_name: Steiner, Myles A. creators_name: García Linares, Pablo creators_name: Warren, Emily creators_name: Tamboli, Adele creators_name: Martí Vega, Antonio creators_name: Antolín Fernández, Elisa creators_id: igarcia@ies-def.upm.es creators_id: antonio.marti@upm.es creators_id: elisa.antolin@upm.es title: Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell publisher: IEEE rights: by-nc-nd ispublished: pub subjects: quimica subjects: electrica full_text_status: public pres_type: paper keywords: Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide abstract: The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells. date_type: published date: 2019 pagerange: 35-40 event_title: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) event_location: Chicago, IL, USA event_dates: 16/06/2019 - 21/06/2019 event_type: conference id_number: 10.1109/PVSC40753.2019.8980563 institution: Ies department: Electronica3 refereed: TRUE book_title: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) official_url: https://ieeexplore.ieee.org/document/8980563 comprojects_type: CM comprojects_type: UPM comprojects_type: UPM comprojects_type: MINECO comprojects_type: MINECO comprojects_code: S2018/EMT-4308 comprojects_code: RYC-2014-15621 comprojects_code: RYC-2015-18539 comprojects_acronym: MADRID-PV2-CM comprojects_title: Materiales, dispositivos y tecnologías para el desarrollo de la industria fotovoltaica comprojects_title: Programa Propio para Ayudas para Fortalecer Planes de Investigación comprojects_title: Programa Propio para Ayudas Predoctorales dela UPM citation: Zehender, Marius Harry and García Vara, Iván and Svatek, Simon Aurel and Steiner, Myles A. and García Linares, Pablo and Warren, Emily and Tamboli, Adele and Martí Vega, Antonio and Antolín Fernández, Elisa (2019). Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell. In: "2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)", 16/06/2019 - 21/06/2019, Chicago, IL, USA. pp. 35-40. https://doi.org/10.1109/PVSC40753.2019.8980563 . document_url: https://oa.upm.es/64911/1/INVE_MEM_2019_322310.pdf