Items where author is "Alén Millán, Benito"
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Steindl, Petr, Sala, Elisa Maddalena, Alén Millán, Benito, Fuertes Marrón, David, Bimberg, Dieter and Klenovsky, Petr (2019). Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix. "Physical Review B", v. 100 (n. 195407); pp. 1-19. ISSN 2469-9950. https://doi.org/10.1103/PhysRevB.100.195407.
Llorens Molina, Juan Antonio, Wewior, L., Cardozo de Oliveira, E.R., Ulloa Herrero, José María, Utrilla Lomas, Antonio David, Fernández González, Álvaro de Guzmán, Hierro Cano, Adrián and Alén Millán, Benito (2015). Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology. "Applied Physics Letters", v. 107 (n. 18); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4934841.
Ulloa Herrero, José María, Llorens, J.M., Alén Millán, Benito, Reyes, D.F., Sales, D.L., Gonzalez, D. and Hierro Cano, Adrián (2012). High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing. "Applied Physics Letters", v. 101 (n. 25); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4773008.
González Taboada, Alfonso, Sanchez, A.M., Beltran, A.M., Bozkurt, M., Alonso Alvarez, Diego, Alén Millán, Benito, Rivera de Mena, Antonio, Ripalda Cobián, Jose María, Llorens, J.M., Martín-Sánchez, J.A., González Diez, M. Yolanda, Ulloa Herrero, José María, García Martín, Jorge Miguel, Molina Rubio, Sergio Ignacio and Koenraad, P.M. (2010). Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. "Physical Review B", v. 82 (n. 23); pp. 235316-1. ISSN 1550-235X. https://doi.org/10.1103/PhysRevB.82.235316.
Alonso Alvarez, Diego, González Taboada, Alfonso, Ripalda Cobián, Jose María, Alén Millán, Benito, González Diez, M. Yolanda, González Soto, Luisa, García Martín, Jorge Miguel, Martí Vega, Antonio, Luque López, Antonio, Briones Fernández-Pola, Fernando, Sanchez, A.M. and Molina Rubio, Sergio Ignacio (2008). Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. "Applied Physics Letters", v. 93 (n. 12); pp. 123114-1. ISSN 0003-6951. https://doi.org/10.1063/1.2978243.
Presentation at Congress or Conference
Gonzalo, A., Utrilla Lomas, Antonio David, Aeberhard, Urs, Llorens, J.M., Alén Millán, Benito, Fuertes Marrón, David, Guzmán, A., Hierro, A. and Ulloa Herrero, José María (2018). Type-II GaAsSb/GaAsN superlattice solar cells. In: "SPIE OPTO", 27/01/2018 - 01/02/2018, San Francisco, California,EE.UU. pp. 1052701-1052709. https://doi.org/10.1117/12.2290079.
Alonso Alvarez, Diego, Alén Millán, Benito, Ripalda Cobián, Jose María, González Taboada, Alfonso, Llorens, J.M., González Diez, M. Yolanda, González Soto, Luisa, Briones Fernández-Pola, Fernando, Antolín Fernández, Elisa, Ramiro Gonzalez, Iñigo, Martí Vega, Antonio, Luque López, Antonio, Roldan, M.A., Hernandez-Saz, J., Herrera, M. and Molina Rubio, Sergio Ignacio (2010). Strain balanced quantum posts for intermediate band solar cells. In: "35th IEEE Photovoltaic Specialists Conference", 20/06/2010 - 25/06/2010, Honolulu, Hawaii, EEUU. ISBN 978-1-4244-5890-5.
Alonso Alvarez, Diego, González Taboada, Alfonso, González Diez, M. Yolanda, Ripalda Cobián, Jose María, Alén Millán, Benito, González Soto, Luisa, García Martín, Jorge Miguel, Luque López, Antonio, Martí Vega, Antonio, Briones Fernández-Pola, Fernando, Sánchez, Almudena M. and Molina Rubio, Sergio Ignacio (2008). Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells. In: "33rd IEEE Photovoltaic Specialist Conference. PVSC '08", 11/05/2008-16/05/2008, San Diego, EEUU. ISBN 978-1-4244-1641. pp. 1719-1724.
