Items where author is "Anderson, Travis J."

Article

Martin Horcajo, Sara, Wang, Ashu, Boscá Mojena, Alberto ORCID: https://orcid.org/0000-0001-5900-1428, Romero Rojo, Fátima ORCID: https://orcid.org/0000-0002-3940-8009, Tadjer, Marko Jak, Koehler, Andrew D., Anderson, Travis J. and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704 (2015). Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries. "Semiconductor Science and Technology", v. 30 (n. 3); pp. 1-10. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/3/035015.

Anderson, Travis J., Hobart, Karl D., Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Caldwell, Joshua D., Bezares, Francisco J., Jernigan, Glenn Geoffrey, Tadjer, Marko Jak, Imhoff, Eugene A., Koehler, Andrew D., Gaskill, D. Kurt, Eddy Jr., Charles R. and Kub, Francis J. (2012). Investigation of the Epitaxial Graphene/p-SiC Heterojunction. "Ieee Electron Device Letters", v. 33 (n. 11); pp. 1610-1612. ISSN 0741-3106. https://doi.org/10.1109/LED.2012.2211562.

Tadjer, Marko Jak, Anderson, Travis J., Hobart, Karl D., Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Gaskill, D. Kurt, Eddy Jr., Charles R., Kub, Francis J. and Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704 (2012). Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures. "Applied Physics Letters" (n. 100); pp. 193506-193509. ISSN 0003-6951. https://doi.org/10.1063/1.4712621.

Currie, Marc, Caldwell, Joshua D., Bezares, Francisco J., Robinson, Jeremy, Anderson, Travis J., Chun, Hayden and Tadjer, Marko Jak (2011). Quantifying pulsed laser induced damage to grapheme. "Applied Physics Letters", v. 99 (n. 21); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3663875.

Tadjer, Marko Jak, Martin Horcajo, Sara, Calle Gómez, Fernando ORCID: https://orcid.org/0000-0001-7869-6704, Anderson, Travis J., Cuerdo Bragado, Roberto and Hobart, Karl D. (2011). Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors. "Physica status solidi c" ; pp. 1-3. ISSN 1862-6351. https://doi.org/10.1002/pssc.201001102.

Presentation at Congress or Conference

Anderson, Travis J., Tadjer, Marko Jak, Hobart, Karl D., Feygelson, Tatyana I., Caldwell, Joshua D., Mastro, Michael A., Hite, Jennifer K., Eddy Jr., Charles R., Kub, Francis J. and Pate, Bradford B. (2012). Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers. In: "CSManTech Conference", 23/04/2012-26-04/2012, Boston, Massachusetts, USA. pp..

Anderson, Travis J., Hobart, Karl D., Tadjer, Marko Jak, Feygelson, Tatyana I., Imhoff, Eugene A., Meyer, David J., Katzer, D. Scott, Hite, Jennifer K., Kub, Francis J., Pate, Bradford B., Binari, Steven. C. and Eddy Jr., Charles R. (2012). Improved GaN-based HEMT performance by nanocrystalline diamond capping. In: "70th Annual Device Research Conference", 18/06/2012-20/06/2012, University Park, Texas, EEUU. pp. 155-156.