Items where author is "Aseev, Pavel"

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Number of items: 5.

Aseev, Pavel (2016). InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications. Thesis (Doctoral), E.T.S.I. Telecomunicación (UPM).

Aseev, Pavel, Gacevic, Zarko ORCID:, Calleja Pardo, Enrique ORCID:, Seger, Brian, Vesborg, Peter C. K. and Chorkendorff, Ib (2016). Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes. In: "21st International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-21)", 25/07/2016 - 29/07/2016, St. Petersburg, Russia. p. 161.

Soto Rodriguez, Paul Eduardo David, Calderón Nash, Verónica, Aseev, Pavel, Gómez Hernández, Victor Jesús, Kumar, Praveen, Ul Hassan Alvi, Naveed, Sánchez, Alfredo, Villalonga, Reynaldo, Pingarrón, José M. and Nöetzel, Richard (2015). Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111). "Electrochemistry Communications", v. 60 ; pp. 158-162. ISSN 1388-2481.

Soto Rodríguez, Paul, Aseev, Pavel, Gómez Hernández, Víctor Jesús, Ul Hassan Alvi, Naveed, Calleja Pardo, Enrique ORCID:, Manuel, José M., Morales Sánchez, Francisco Miguel, Kumar, Praveen, Jiménez, Juan J., García, Rafael, Senichev, Alexander, Lienau, Christoph and Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951.

Gómez Hernández, Víctor Jesús, Gacevic, Zarko ORCID:, Aseev, Pavel, Soto Rodríguez, Paul, Kumar, Praveen, Calleja Pardo, Enrique ORCID:, Nötzel, Richard and Sánchez García, Miguel Ángel ORCID: (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. In: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

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