Items where author is "Aseev, Pavel"

Article

Soto Rodriguez, Paul Eduardo David and Calderón Nash, Verónica and Aseev, Pavel and Gómez Hernández, Victor Jesús and Kumar, Praveen and Ul Hassan Alvi, Naveed and Sánchez, Alfredo and Villalonga, Reynaldo and Pingarrón, José M. and Nöetzel, Richard (2015). Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111). "Electrochemistry Communications", v. 60 ; pp. 158-162. ISSN 1388-2481. https://doi.org/10.1016/j.elecom.2015.09.003.

Soto Rodríguez, Paul and Aseev, Pavel and Gómez Hernández, Víctor Jesús and Ul Hassan Alvi, Naveed and Calleja Pardo, Enrique and Manuel, José M. and Morales Sánchez, Francisco Miguel and Kumar, Praveen and Jiménez, Juan J. and García, Rafael and Senichev, Alexander and Lienau, Christoph and Nötzel, Richard (2015). Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111). "Applied Physics Letters", v. 106 (n. 2); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4905662.

Presentation at Congress or Conference

Aseev, Pavel and Gacevic, Zarko and Calleja Pardo, Enrique and Seger, Brian and Vesborg, Peter C. K. and Chorkendorff, Ib (2016). Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes. In: "21st International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-21)", 25/07/2016 - 29/07/2016, St. Petersburg, Russia. p. 161.

Gómez Hernández, Víctor Jesús and Gacevic, Zarko and Aseev, Pavel and Soto Rodríguez, Paul and Kumar, Praveen and Calleja Pardo, Enrique and Nötzel, Richard and Sánchez García, Miguel Ángel (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. In: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

Thesis

Aseev, Pavel (2016). InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications. Thesis (Doctoral), E.T.S.I. Telecomunicación (UPM). https://doi.org/10.20868/UPM.thesis.44615.