Items where author is "Koenraad, P.M."

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Number of items: 10.

Article

Ulloa Herrero, José María and Llorens, J.M. and Moral, M. del and Bozkurt, M. and Koenraad, P.M. and Hierro Cano, Adrián (2012). Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots. "Journal of Applied Physics", v. 112 (n. 7); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4755794.

González Taboada, Alfonso and Sanchez, A.M. and Beltran, A.M. and Bozkurt, M. and Alonso Alvarez, Diego and Alén Millán, Benito and Rivera de Mena, Antonio and Ripalda Cobián, Jose María and Llorens, J.M. and Martín-Sánchez, J.A. and González Diez, M. Yolanda and Ulloa Herrero, José María and García Martín, Jorge Miguel and Molina Rubio, Sergio Ignacio and Koenraad, P.M. (2010). Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. "Physical Review B", v. 82 (n. 23); pp. 235316-1. ISSN 1550-235X. https://doi.org/10.1103/PhysRevB.82.235316.

Ulloa Herrero, José María and Koenraad, P.M. and Fuster, David and González Soto, Luisa and González Diez, M. Yolanda and Gonzalez, M.U (2008). Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires. "Nanotechnology", v. 19 (n. 44); pp.. ISSN 0957-4484. https://doi.org/10.1088/0957-4484/19/44/445601.

Ulloa Herrero, José María and Koenraad, P.M. and Hopkinson, M. (2008). Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy. "Applied Physics Letters", v. 93 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2968213.

Ulloa Herrero, José María and Anantahanasarn, S. and Van Veldhoven, P.J and Koenraad, P.M. and Nötzel, R. (2008). Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy. "Applied Physics Letters", v. 92 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2884692.

Book Section

Ulloa Herrero, José María and Offermans, P. and Koenraad, P.M. (2008). InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy. In: "Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics". Elsevier, Amsterdam, Paises Bajos, pp. 165-200. ISBN 978-0-08-046325-4. https://doi.org/10.1016/B978-0-08-046325-4.00005-0.

Presentation at Congress or Conference

Grossi, Davide and Keizer, Joris Gerhard and Ulloa Herrero, José María and Smereka, Peter and Koenraad, P.M. (2014). Height control of self-assembled quantum dots. In: "8th International Conference on Quantum Dots (QD 2014)", 11/05/2014 - 16/05/2014, Pisa, Italy. p. 1.

Ulloa Herrero, José María and Moral, M. del and Montes, M. and Bozkurt, M. and Koenraad, P.M. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2011). Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs. In: "SPIE Photonics West 2011", 25/01/2011 - 27/01/2011, San Francisco, CA, EEUU. pp..

Migliorato, M.A. and Haxha, V. and Garg, R. and Drouzas, I.W. and Ulloa Herrero, José María and Koenraad, P.M. and Steer, M.J. and Liu, H.Y. and Hopkinson, M. and Mowbray, D.J. (2008). Atomistic Modelling of III-V Semiconductors: from a single tetrahedron to millions of atoms. In: "17th European Heterostructure Technology Workshop (Hetech 2008)", 02/11/2008-05/11/2008, Venecia, Italia. ISBN 978-8-861-29296-3.

Haxha, V. and Garg, R. and Migliorato, M.A. and Drouzas, I.W. and Ulloa Herrero, José María and Koenraad, P.M. and Steer, M.J. and Liu, H.Y. and Hopkinson, M. and Mowbray, D.J. (2008). The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs. In: "8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008", 01/09/2008-05/09/2008, Nottingham, UK. ISBN 978-1-4244-2307-1.

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