Items where author is "Kong, Xiang"

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Article

Albert, Steven and Bengoechea Encabo, Ana and Kong, Xiang and Sánchez García, Miguel Ángel and Trampert, Achim and Calleja Pardo, Enrique (2015). Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy. "Crystal Growth & Design", v. 15 (n. 6); pp. 2661-2666. ISSN 1528-7483. https://doi.org/10.1021/cg501798j.

Kong, Xiang and Albert, Steven and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Calle Gómez, Fernando and Trampert, Achim (2015). Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate. "Physica Status Solidi A-Applications and materials science", v. 212 (n. 4); pp. 736-739. ISSN 1862-6300. https://doi.org/10.1002/pssa.201400198.

Albert, Steven and Bengoechea Encabo, Ana and Barbagini, Francesca and López Romero, David and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Lefebvre, Pierre and Kong, Xiang and Jahn, Uwe and Trampert, Achim and Müller, Marcus and Bertram, Frank and Schmidt, Gordon and Veit, Peter and Petzold, Silke and Christen, Jürgen and Mierry, Philippe de and Zuñiga Pérez, Jesús (2014). Advances on MBE selective area growth of III-nitride nanostructures: from nanoLEDs to pseudo substrates. "International Journal of High Speed Electronics and Systems", v. 23 (n. 3-4); pp.. ISSN 1793-6438. https://doi.org/10.1142/S0129156414500207.

Presentation at Congress or Conference

Albert, S. and Bengoechea Encabo, Ana and López Romero, David and Mierry, Philippe de and Zuñiga Pérez, Jesús and Kong, Xiang and Trampert, Achim and Sánchez García, Miguel Ángel and Calleja Pardo, Enrique (2015). Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications. In: "Quantum Sensing and Nanophotonic Devices XII", 08/02/2015 - 12/02/2015, San Francisco, California, USA. pp.. https://doi.org/10.1117/12.2085079.

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