Items where author is "Sánchez García, Miguel Ángel"

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Number of items: 6.

Article

Albert, Steven and Bengoechea Encabo, Ana and Kong, Xiang and Sánchez García, Miguel Ángel and Trampert, Achim and Calleja Pardo, Enrique (2015). Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy. "Crystal Growth & Design", v. 15 (n. 6); pp. 2661-2666. ISSN 1528-7483. https://doi.org/10.1021/cg501798j.

Albert, Steven and Bengoechea Encabo, Ana and Ledig, Johannes and Schimpke, Tilman and Sánchez García, Miguel Ángel and Strassburg, Martin and Waag, Andreas and Calleja Pardo, Enrique (2015). Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars. "Crystal Growth & Design", v. 15 (n. 8); pp. 3661-3665. ISSN 1528-7483. https://doi.org/10.1021/acs.cgd.5b00235.

Presentation at Congress or Conference

Sánchez García, Miguel Ángel and Albert, Steven and Bengoechea Encabo, Ana and Calleja Pardo, Enrique and Trampert, Achim and Zuniga Perez, J. (2015). Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations. In: "2015 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic materials and Devices", 11/07/2015 - 14/07/215, Kyoto, Japan.

Albert, S. and Bengoechea Encabo, Ana and López Romero, David and Mierry, Philippe de and Zuñiga Pérez, Jesús and Kong, Xiang and Trampert, Achim and Sánchez García, Miguel Ángel and Calleja Pardo, Enrique (2015). Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications. In: "Quantum Sensing and Nanophotonic Devices XII", 08/02/2015 - 12/02/2015, San Francisco, California, USA. pp.. https://doi.org/10.1117/12.2085079.

Gómez Hernández, Víctor Jesús and Gacevic, Zarko and Aseev, Pavel and Soto Rodríguez, Paul and Kumar, Praveen and Calleja Pardo, Enrique and Nötzel, Richard and Sánchez García, Miguel Ángel (2014). XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire. In: "International Workshop on Nitride Semiconductors (IWN2014)", 24/08/2014 - 29/08/2014, Wroclaw, Poland. p. 1.

Final Project

Sánchez García, Miguel Ángel (1998). Fundación Greenpeace, Estocolmo, Suecia. Proyecto Fin de Carrera / Trabajo Fin de Grado, E.T.S. Arquitectura (UPM).

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