High conductivity and thermoelectric power factor in p-Type MoS2 nanosheets

Resumen

Transition metal dichalcogenides, particularly Nb-doped MoS2, present unique electronic and thermoelectric properties that make them promising candidates for a variety of applications, including photovoltaic cells and thermoelectric devices. Here, we investigate the influence of controlled substitutional doping on the electrical conductivity and thermoelectric performance of MoS2 as a function of crystal thickness. We report an exceptional bulk conductivity of up to 360 +/- 30 S cm-1 and a peak power factor of 370 +/- 80 mu W m-1 K-2 at room temperature. Our findings reveal that the interplay between doping concentration and thickness can decouple the Seebeck coefficient from electrical conductivity, overcoming the typical trade-off observed in conventional materials. This research highlights the role of surface effects and depletion regions in p-type transition metal dichalcogenides, providing a pathway for developing efficient bipolar thermoelectric devices. The stability and tunability of p-type doping in MoS2 also suggest potential applications in microscale cooling, thermal sensors, and photovoltaic systems.