On the design and characterization procedure of 300-GHz slotline-coupled oscillators in CMOS

Ferreras Mayo, Marta ORCID: https://orcid.org/0000-0001-5231-7251 and Grajal de la Fuente, Jesús ORCID: https://orcid.org/0000-0001-8081-2815 (2023). On the design and characterization procedure of 300-GHz slotline-coupled oscillators in CMOS. En: "2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC)", 08/11/2023-11/11/2023, Aveiro. Portugal. p. 4. https://doi.org/10.1109/INMMIC57329.2023.10321801.

Descripción

Título: On the design and characterization procedure of 300-GHz slotline-coupled oscillators in CMOS
Autor/es:
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC)
Fechas del Evento: 08/11/2023-11/11/2023
Lugar del Evento: Aveiro. Portugal
Título del Libro: 2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
Fecha: 1 Enero 2023
ISSN: 2689548X
Materias:
ODS:
Palabras Clave Informales: CMOS; co-simulation; harmonic oscillator; MMIC; standing-wave oscillator (SWO); terahertz; voltage-controlled oscillator (VCO)
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Señales, Sistemas y Radiocomunicaciones
Licencias Creative Commons: Ninguna

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Resumen

This contribution reports on a submillimeter-wave source consisting of two mutually coupled harmonic oscillators in CMOS that emit coherent radiation at 300 GHz. The unitary oscillator cell uses a differential self-feeding topology which incorporates an on-chip integrated folded-slot antenna for second-harmonic radiation. To increase the radiated power, two free-running oscillator units are injection-locked by each other through their respective slotline resonators. In this case, a standing wave is sustained across the array with a virtual short circuit at the connection point. Both, the single and the two-coupled oscillator were prototyped in commercial 65-nm CMOS technology. In combination with a silicon lens, the measured samples produced linear-polarized radiation above 290 GHz with frequency tunability exceeding 10 GHz and 6 GHz for the single and the double oscillator designs, respectively.

Proyectos asociados

Tipo
Código
Acrónimo
Responsable
Título
Gobierno de España
PID2020-113979RB-C21
Sin especificar
Sin especificar
Radar multiestatico en bandas milimetricas para generar imagenes dinamicas 3d en campo cercano: sensor (multiscan-upm)

Más información

ID de Registro: 91760
Identificador DC: https://oa.upm.es/91760/
Identificador OAI: oai:oa.upm.es:91760
URL Portal Científico: https://portalcientifico.upm.es/es/ipublic/item/10148142
Identificador DOI: 10.1109/INMMIC57329.2023.10321801
URL Oficial: https://ieeexplore.ieee.org/document/10321801
Depositado por: iMarina Portal Científico
Depositado el: 05 Nov 2025 08:11
Ultima Modificación: 05 Nov 2025 08:11