Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models

García Vara, Iván; Espinet González, Pilar; Rey-Stolle Prado, Ignacio y Algora del Valle, Carlos (2011). Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models. "IEEE Journal of Photovoltaics", v. 1 (n. 2); pp. 219-224. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2011.2171671.

Descripción

Título: Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models
Autor/es:
  • García Vara, Iván
  • Espinet González, Pilar
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Fecha: 2011
Volumen: 1
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable. Such a requirement involves the need for suitable modeling and simulation tools in order to complement the experimental work and circumvent its well-known burdens and restrictions. Three-dimensional distributed models have been demonstrated in the past to be a powerful choice for the analysis of distributed phenomena in single- and dual-junction solar cells, as well as for the design of strategies to minimize the solar cell losses when operating under high concentrations. In this paper, we present the application of these models for the analysis of triple-junction solar cells under real operating conditions. The impact of different chromatic aberration profiles on the short-circuit current of triple-junction solar cells is analyzed in detail using the developed distributed model. Current spreading conditions the impact of a given chromatic aberration profile on the solar cell I-V curve. The focus is put on determining the role of current spreading in the connection between photocurrent profile, subcell voltage and current, and semiconductor layers sheet resistance.

Más información

ID de Registro: 11776
Identificador DC: http://oa.upm.es/11776/
Identificador OAI: oai:oa.upm.es:11776
Identificador DOI: 10.1109/JPHOTOV.2011.2171671
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6078387
Depositado por: Memoria Investigacion
Depositado el: 03 Oct 2012 07:43
Ultima Modificación: 22 Sep 2014 10:51
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