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ORCID: https://orcid.org/0000-0002-1494-9351, Calleja Pardo, Enrique
ORCID: https://orcid.org/0000-0002-3686-8982, Sánchez García, Miguel Angel
ORCID: https://orcid.org/0000-0002-1494-9351, Jahn, U. and Trampert, Achim
(2011).
Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.
"Applied Physics Letters", v. 99
(n. 13);
pp..
ISSN 0003-6951.
https://doi.org/10.1063/1.3644986.
| Título: | Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Physics Letters |
| Fecha: | Septiembre 2011 |
| ISSN: | 0003-6951 |
| Volumen: | 99 |
| Número: | 13 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission
| ID de Registro: | 11858 |
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| Identificador DC: | https://oa.upm.es/11858/ |
| Identificador OAI: | oai:oa.upm.es:11858 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5486339 |
| Identificador DOI: | 10.1063/1.3644986 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 27 Sep 2012 10:29 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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