Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

Albert, Steven and Bengoechea Encabo, Ana and Lefebvre, P. and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Sánchez García, Miguel Angel and Jahn, U. and Trampert, Achim (2011). Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates. "Applied Physics Letters", v. 99 (n. 13); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.3644986.

Description

Title: Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Lefebvre, P.
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
  • Sánchez García, Miguel Angel
  • Jahn, U.
  • Trampert, Achim
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: September 2011
Volume: 99
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission

More information

Item ID: 11858
DC Identifier: http://oa.upm.es/11858/
OAI Identifier: oai:oa.upm.es:11858
DOI: 10.1063/1.3644986
Deposited by: Memoria Investigacion
Deposited on: 27 Sep 2012 10:29
Last Modified: 21 Apr 2016 11:02
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