Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation

Milla Rodrigo, M. J. and Fernández González, Alvaro de Guzmán and Gargallo Caballero, Raquel and Ulloa Herrero, José María and Hierro Cano, Adrián (2011). Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation. "Journal of Crystal Growth", v. 323 (n. 1); pp. 215-218. ISSN 0022-0248. https://doi.org/10.1016/j.jcrysgro.2010.12.045.

Description

Title: Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation
Author/s:
  • Milla Rodrigo, M. J.
  • Fernández González, Alvaro de Guzmán
  • Gargallo Caballero, Raquel
  • Ulloa Herrero, José María
  • Hierro Cano, Adrián
Item Type: Article
Título de Revista/Publicación: Journal of Crystal Growth
Date: May 2011
ISSN: 0022-0248
Volume: 323
Subjects:
Faculty: E.U.I.T. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm.

More information

Item ID: 11870
DC Identifier: http://oa.upm.es/11870/
OAI Identifier: oai:oa.upm.es:11870
DOI: 10.1016/j.jcrysgro.2010.12.045
Deposited by: Memoria Investigacion
Deposited on: 27 Sep 2012 08:49
Last Modified: 21 Apr 2016 11:03
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