Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

Fuentes Iriarte, Gonzalo; Rodriguez Madrid, Juan y Calle Gómez, Fernando (2012). Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates. "Journal of materials processing technology", v. 212 (n. 3); pp. 707-712. ISSN 0924-0136. https://doi.org/10.1016/j.jmatprotec.2011.08.007.

Descripción

Título: Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates
Autor/es:
  • Fuentes Iriarte, Gonzalo
  • Rodriguez Madrid, Juan
  • Calle Gómez, Fernando
Tipo de Documento: Artículo
Título de Revista/Publicación: Journal of materials processing technology
Fecha: Marzo 2012
Volumen: 212
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Más información

ID de Registro: 11871
Identificador DC: http://oa.upm.es/11871/
Identificador OAI: oai:oa.upm.es:11871
Identificador DOI: 10.1016/j.jmatprotec.2011.08.007
Depositado por: Memoria Investigacion
Depositado el: 27 Sep 2012 08:26
Ultima Modificación: 21 Abr 2016 11:03
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