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Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
Cita
Redondo-Cubero, Andrés, Hierro Cano, Adrián 
ORCID: https://orcid.org/0000-0002-0414-4920, Chauveau, J.-M., Lorenz, K., Tabares Jimenez, Gema, Franco, N., Alves, E. and Muñoz Merino, Elias ORCID: https://orcid.org/0000-0001-7482-2590
(2011).
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents.
"CrystEngComm", v. 1
(n. 2011);
pp. 1-5.
ISSN 1466-8033.
https://doi.org/10.1039/C2CE06315H.
ORCID: https://orcid.org/0000-0002-0414-4920, Chauveau, J.-M., Lorenz, K., Tabares Jimenez, Gema, Franco, N., Alves, E. and Muñoz Merino, Elias ORCID: https://orcid.org/0000-0001-7482-2590
(2011).
Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents.
"CrystEngComm", v. 1
(n. 2011);
pp. 1-5.
ISSN 1466-8033.
https://doi.org/10.1039/C2CE06315H.
Descripción
| Título: | Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | CrystEngComm |
| Fecha: | 2011 |
| ISSN: | 1466-8033 |
| Volumen: | 1 |
| Número: | 2011 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
High quality 1 μm thick a-plane MgxZn1−xO layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes.
Más información
| ID de Registro: | 11939 |
|---|---|
| Identificador DC: | https://oa.upm.es/11939/ |
| Identificador OAI: | oai:oa.upm.es:11939 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/6696075 |
| Identificador DOI: | 10.1039/C2CE06315H |
| URL Oficial: | http://pubs.rsc.org/en/Content/ArticleLanding/2012... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 27 Sep 2012 11:13 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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