Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

Redondo-Cubero, Andrés and Hierro Cano, Adrián and Chauveau, J.-M. and Lorenz, K. and Tabares Jimenez, Gema and Franco, N. and Alves, E. and Muñoz Merino, Elias (2011). Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents. "CrystEngComm", v. 1 (n. 2011); pp. 1-5. ISSN 1466-8033. https://doi.org/10.1039/C2CE06315H.

Description

Title: Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
Author/s:
  • Redondo-Cubero, Andrés
  • Hierro Cano, Adrián
  • Chauveau, J.-M.
  • Lorenz, K.
  • Tabares Jimenez, Gema
  • Franco, N.
  • Alves, E.
  • Muñoz Merino, Elias
Item Type: Article
Título de Revista/Publicación: CrystEngComm
Date: 2011
ISSN: 1466-8033
Volume: 1
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

High quality 1 μm thick a-plane MgxZn1−xO layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes.

More information

Item ID: 11939
DC Identifier: http://oa.upm.es/11939/
OAI Identifier: oai:oa.upm.es:11939
DOI: 10.1039/C2CE06315H
Official URL: http://pubs.rsc.org/en/Content/ArticleLanding/2012/CE/c2ce06315h
Deposited by: Memoria Investigacion
Deposited on: 27 Sep 2012 11:13
Last Modified: 23 Feb 2015 15:45
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