One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells

Dussaigne, A. and Corfdir, P. and Levrat, J. and Zhu, T. and Martin, D. and Lefebvre, P. and Ganiere, J.D. and Butte, R. and Deveaud-Pledran, B. and Grandjean, N. and Stadelmann, P. (2011). One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells. "Semiconductor Science And Technology", v. 26 (n. 2); pp.. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/26/2/025012.

Description

Title: One dimensional exciton luminescence induced by extended defects in nonpolar (Al,Ga)N/GaN quantum wells
Author/s:
  • Dussaigne, A.
  • Corfdir, P.
  • Levrat, J.
  • Zhu, T.
  • Martin, D.
  • Lefebvre, P.
  • Ganiere, J.D.
  • Butte, R.
  • Deveaud-Pledran, B.
  • Grandjean, N.
  • Stadelmann, P.
Item Type: Article
Título de Revista/Publicación: Semiconductor Science And Technology
Date: 2011
ISSN: 0268-1242
Volume: 26
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given Al content, the narrower the QW emission line. In structures with an Al content set to 5 or 10%, we also observe emission from excitons bound to the intersection of I1-type basal plane stacking faults (BSFs) with the QW. Similarly to what is seen in bulk material, the temperature dependence of BSF-bound QW exciton luminescence reveals intra-BSF localization. A qualitative model evidences the large spatial extension of the wavefunction of these BSF-bound QW excitons, making them extremely sensitive to potential fluctuations located in and away from BSF. Finally, polarization-dependent measurements show a strong emission anisotropy for BSF-bound QW excitons, which is related to their one-dimensional character and that confirms that the intersection between a BSF and a GaN/(Al,Ga)N QW can be described as a quantum wire.

More information

Item ID: 12057
DC Identifier: http://oa.upm.es/12057/
OAI Identifier: oai:oa.upm.es:12057
DOI: 10.1088/0268-1242/26/2/025012
Official URL: http://iopscience.iop.org/0268-1242/26/2/025012/
Deposited by: Memoria Investigacion
Deposited on: 14 Sep 2012 11:18
Last Modified: 21 Apr 2016 11:13
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