Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

Hierro Cano, Adrián; Montes Bajo, Miguel; Moral, M. del; Ulloa Herrero, José María y Fernández González, Alvaro de Guzmán (2011). Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms. En: "16th European Molecular Beam Epitaxy Workshop", 09/05/2011 - 13/05/2011, AlpesFranceses, Francia. pp..

Descripción

Título: Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms
Autor/es:
  • Hierro Cano, Adrián
  • Montes Bajo, Miguel
  • Moral, M. del
  • Ulloa Herrero, José María
  • Fernández González, Alvaro de Guzmán
Tipo de Documento: Ponencia en Congreso o Jornada (Póster)
Título del Evento: 16th European Molecular Beam Epitaxy Workshop
Fechas del Evento: 09/05/2011 - 13/05/2011
Lugar del Evento: AlpesFranceses, Francia
Título del Libro: Proceedings of 16th European Molecular Beam Epitaxy Workshop
Fecha: 2011
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Más información

ID de Registro: 12889
Identificador DC: http://oa.upm.es/12889/
Identificador OAI: oai:oa.upm.es:12889
URL Oficial: http://embe2011.neel.cnrs.fr/
Depositado por: Memoria Investigacion
Depositado el: 12 Dic 2012 18:40
Ultima Modificación: 21 Abr 2016 12:12
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