Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

Hierro Cano, Adrián and Montes Bajo, Miguel and Moral, M. del and Ulloa Herrero, José María and Fernández González, Alvaro de Guzmán (2011). Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms. In: "16th European Molecular Beam Epitaxy Workshop", 09/05/2011 - 13/05/2011, AlpesFranceses, Francia. pp..

Description

Title: Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms
Author/s:
  • Hierro Cano, Adrián
  • Montes Bajo, Miguel
  • Moral, M. del
  • Ulloa Herrero, José María
  • Fernández González, Alvaro de Guzmán
Item Type: Presentation at Congress or Conference (Poster)
Event Title: 16th European Molecular Beam Epitaxy Workshop
Event Dates: 09/05/2011 - 13/05/2011
Event Location: AlpesFranceses, Francia
Title of Book: Proceedings of 16th European Molecular Beam Epitaxy Workshop
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

More information

Item ID: 12889
DC Identifier: http://oa.upm.es/12889/
OAI Identifier: oai:oa.upm.es:12889
Official URL: http://embe2011.neel.cnrs.fr/
Deposited by: Memoria Investigacion
Deposited on: 12 Dec 2012 18:40
Last Modified: 21 Apr 2016 12:12
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