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ORCID: https://orcid.org/0000-0001-7869-6704 and Villar, María Del Pilar
(2011).
Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.
En: "2011 IEEE International Ultrasonics Symposium (IUS)", 18/10/2011 - 21/10/2011, Orlando, Florida, EEUU. ISBN 978-1-4577-1253-1. pp..
| Título: | Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology |
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| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Artículo) |
| Título del Evento: | 2011 IEEE International Ultrasonics Symposium (IUS) |
| Fechas del Evento: | 18/10/2011 - 21/10/2011 |
| Lugar del Evento: | Orlando, Florida, EEUU |
| Título del Libro: | Proceedings of 2011 IEEE International Ultrasonics Symposium (IUS) |
| Fecha: | 2011 |
| ISBN: | 978-1-4577-1253-1 |
| Materias: | |
| ODS: | |
| Escuela: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.
| ID de Registro: | 12898 |
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| Identificador DC: | https://oa.upm.es/12898/ |
| Identificador OAI: | oai:oa.upm.es:12898 |
| URL Oficial: | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 08 Nov 2012 12:01 |
| Ultima Modificación: | 21 Abr 2016 12:13 |
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