Room temperature photoluminescence of InGaAs Surface Quantum Dots

Ulloa Herrero, José María and Yamamoto, K. and Fernández González, Alvaro de Guzmán and Hierro Cano, Adrián (2011). Room temperature photoluminescence of InGaAs Surface Quantum Dots. In: "Proceedings Quantum Dot France", 16/06/2011 - 17/06/2011, Toulosse (France) 2011. pp..

Description

Title: Room temperature photoluminescence of InGaAs Surface Quantum Dots
Author/s:
  • Ulloa Herrero, José María
  • Yamamoto, K.
  • Fernández González, Alvaro de Guzmán
  • Hierro Cano, Adrián
Item Type: Presentation at Congress or Conference (Other)
Event Title: Proceedings Quantum Dot France
Event Dates: 16/06/2011 - 17/06/2011
Event Location: Toulosse (France) 2011
Title of Book: Quantum Dot France
Date: 2011
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications

More information

Item ID: 12916
DC Identifier: http://oa.upm.es/12916/
OAI Identifier: oai:oa.upm.es:12916
Deposited by: Memoria Investigacion
Deposited on: 29 Jan 2013 08:35
Last Modified: 21 Apr 2016 12:14
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