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Room temperature photoluminescence of InGaAs Surface Quantum Dots
Cita
Ulloa Herrero, José María 
ORCID: https://orcid.org/0000-0002-5679-372X, Yamamoto, K., Fernández González, Álvaro de Guzmán ORCID: https://orcid.org/0000-0001-5386-0360 and Hierro Cano, Adrián ORCID: https://orcid.org/0000-0002-0414-4920
(2011).
Room temperature photoluminescence of InGaAs Surface Quantum Dots.
En: "Proceedings Quantum Dot France", 16/06/2011 - 17/06/2011, Toulosse (France) 2011. pp..
ORCID: https://orcid.org/0000-0002-5679-372X, Yamamoto, K., Fernández González, Álvaro de Guzmán ORCID: https://orcid.org/0000-0001-5386-0360 and Hierro Cano, Adrián ORCID: https://orcid.org/0000-0002-0414-4920
(2011).
Room temperature photoluminescence of InGaAs Surface Quantum Dots.
En: "Proceedings Quantum Dot France", 16/06/2011 - 17/06/2011, Toulosse (France) 2011. pp..
Descripción
| Título: | Room temperature photoluminescence of InGaAs Surface Quantum Dots |
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| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Otro) |
| Título del Evento: | Proceedings Quantum Dot France |
| Fechas del Evento: | 16/06/2011 - 17/06/2011 |
| Lugar del Evento: | Toulosse (France) 2011 |
| Título del Libro: | Quantum Dot France |
| Fecha: | 2011 |
| Materias: | |
| ODS: | |
| Escuela: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications
Más información
| ID de Registro: | 12916 |
|---|---|
| Identificador DC: | https://oa.upm.es/12916/ |
| Identificador OAI: | oai:oa.upm.es:12916 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 29 Ene 2013 08:35 |
| Ultima Modificación: | 28 Mar 2023 16:17 |
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