Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

Romero Rojo, Fátima; Uren, M.; Jiménez, A.; Dua, C.; Tadjer, Marko Jak; Cuerdo Bragado, Roberto; Calle Gómez, Fernando y Muñoz Merino, Elias (2011). Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability. En: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..

Descripción

Título: Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability
Autor/es:
  • Romero Rojo, Fátima
  • Uren, M.
  • Jiménez, A.
  • Dua, C.
  • Tadjer, Marko Jak
  • Cuerdo Bragado, Roberto
  • Calle Gómez, Fernando
  • Muñoz Merino, Elias
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 9th International Conference on Nitride Semiconductors
Fechas del Evento: 10/07/2011 - 15/07/2011
Lugar del Evento: Glasgow, UK
Título del Libro: proceedings of 9th International Conference on Nitride Semiconductors
Fecha: 2011
Materias:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

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ID de Registro: 12930
Identificador DC: http://oa.upm.es/12930/
Identificador OAI: oai:oa.upm.es:12930
Depositado por: Memoria Investigacion
Depositado el: 07 Nov 2012 12:53
Ultima Modificación: 21 Abr 2016 12:15
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