Impact of N2 plasma power and duration on AlGaN/GaN HEMT

Romero Rojo, Fátima; Jiménez, A.; González-Posada Flores, Francisco; Martin Horcajo, Sara; Calle Gómez, Fernando y Muñoz Merino, Elias (2011). Impact of N2 plasma power and duration on AlGaN/GaN HEMT. En: "9th International Conference on Nitride Semiconductors", 10/07/2011 - 15/07/2011, Glasgow, UK. pp..


Título: Impact of N2 plasma power and duration on AlGaN/GaN HEMT
  • Romero Rojo, Fátima
  • Jiménez, A.
  • González-Posada Flores, Francisco
  • Martin Horcajo, Sara
  • Calle Gómez, Fernando
  • Muñoz Merino, Elias
Tipo de Documento: Ponencia en Congreso o Jornada (Póster)
Título del Evento: 9th International Conference on Nitride Semiconductors
Fechas del Evento: 10/07/2011 - 15/07/2011
Lugar del Evento: Glasgow, UK
Título del Libro: Proceedings of 9th International Conference on Nitride Semiconductors
Fecha: 2011
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (1MB) | Vista Previa


urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Más información

ID de Registro: 12931
Identificador DC:
Identificador OAI:
Depositado por: Memoria Investigacion
Depositado el: 07 Nov 2012 12:36
Ultima Modificación: 21 Abr 2016 12:15
  • InvestigaM
  • GEO_UP4
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM