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Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
Cita
Gacevic, Zarko 
ORCID: https://orcid.org/0000-0003-0552-2169, Fernández-Garrido, Sergio, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Hosseini, D., Estradé, S. and Peiró, F.
(2011).
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy.
En: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.
ORCID: https://orcid.org/0000-0003-0552-2169, Fernández-Garrido, Sergio, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Hosseini, D., Estradé, S. and Peiró, F.
(2011).
Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy.
En: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.
Descripción
| Título: | Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy |
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| Autor/es: |
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| Tipo de Documento: | Ponencia en Congreso o Jornada (Póster) |
| Título del Evento: | 16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011 |
| Fechas del Evento: | 20/03/2011 - 23/03/2011 |
| Lugar del Evento: | AlpesFranceses, Francia |
| Título del Libro: | Proceedings of 16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011 |
| Fecha: | 2011 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy
Más información
| ID de Registro: | 13380 |
|---|---|
| Identificador DC: | https://oa.upm.es/13380/ |
| Identificador OAI: | oai:oa.upm.es:13380 |
| URL Oficial: | http://embe2011.neel.cnrs.fr/spip.php?article39 |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 24 Oct 2012 09:28 |
| Ultima Modificación: | 21 Abr 2016 12:42 |
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