Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy

Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Hosseini, D. and Estradé, S. and Peiró, F. (2011). Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy. In: "16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011", 20/03/2011 - 23/03/2011, AlpesFranceses, Francia.

Description

Title: Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
Author/s:
  • Gacevic, Zarko
  • Fernández-Garrido, Sergio
  • Calleja Pardo, Enrique
  • Hosseini, D.
  • Estradé, S.
  • Peiró, F.
Item Type: Presentation at Congress or Conference (Poster)
Event Title: 16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011
Event Dates: 20/03/2011 - 23/03/2011
Event Location: AlpesFranceses, Francia
Title of Book: Proceedings of 16th European Molecular Beam Epitaxy Workshop, Euro MEB 2011
Date: 2011
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The high lattice mismatch between III-nitride binaries (InN, GaN and AlN) remains a key problem to grow high quality III-nitride heterostructures. Recent interest has been focused on the growth of high-quality InAlN layers, with approximately 18% of indium incorporation, in-plane lattice-matched (LM) to GaN. While a lot of work has been done by metal-organic vapour phase epitaxy (MOVPE) by Carlin and co-workers, its growth by molecular beam epitaxy (MBE) is still in infancy

More information

Item ID: 13380
DC Identifier: http://oa.upm.es/13380/
OAI Identifier: oai:oa.upm.es:13380
Official URL: http://embe2011.neel.cnrs.fr/spip.php?article39
Deposited by: Memoria Investigacion
Deposited on: 24 Oct 2012 09:28
Last Modified: 21 Apr 2016 12:42
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