MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates

Sánchez García, Miguel Angel ORCID: https://orcid.org/0000-0002-1494-9351, Albert, Steven, Bengoechea Encabo, Ana, Barbagini, Francesca, Lefebvre, P. and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982 (2011). MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates. En: "2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices", 16/03/2011 - 18/03/2011, Granada, España.

Descripción

Título: MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
Autor/es:
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
Fechas del Evento: 16/03/2011 - 18/03/2011
Lugar del Evento: Granada, España
Título del Libro: Proceedings of 2011 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
Fecha: 2011
Materias:
ODS:
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

InN layers: MBE growth issues Growth of InN-based thin films: InN/InGaN QWS on GaN Growth of InN-based nanorods
● Self Self-assembled assembled InN InN nanorods nanorods onon different different substrates substrates
● Self-assembled InGaN nanorods
● Broad- Broad-emission emission nanostructures
● Self Self--assembled assembled InGaN InGaN--based based Qdisks Qdisks
● Selective area growth (SAG) of InGaN Qdisks

Más información

ID de Registro: 13542
Identificador DC: https://oa.upm.es/13542/
Identificador OAI: oai:oa.upm.es:13542
URL Oficial: http://www.isom.upm.es/GeJpSp2011/index.html
Depositado por: Memoria Investigacion
Depositado el: 22 Nov 2012 10:15
Ultima Modificación: 03 Mar 2023 09:15