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Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators
Cita
Iborra Grau, Enrique 
ORCID: https://orcid.org/0000-0002-1385-1379, Clement Lorenzo, Marta ORCID: https://orcid.org/0000-0003-4956-8206, Capilla Osorio, José, Olivares Roza, Jimena ORCID: https://orcid.org/0000-0003-4396-4363 and Felmetsger, Valeriy
(2012).
Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators.
"THIN SOLID FILMS", v. 520
(n. 7);
pp. 3060-3063.
ISSN 0040-6090.
https://doi.org/10.1016/j.tsf.2011.11.007.
ORCID: https://orcid.org/0000-0002-1385-1379, Clement Lorenzo, Marta ORCID: https://orcid.org/0000-0003-4956-8206, Capilla Osorio, José, Olivares Roza, Jimena ORCID: https://orcid.org/0000-0003-4396-4363 and Felmetsger, Valeriy
(2012).
Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators.
"THIN SOLID FILMS", v. 520
(n. 7);
pp. 3060-3063.
ISSN 0040-6090.
https://doi.org/10.1016/j.tsf.2011.11.007.
Descripción
| Título: | Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | THIN SOLID FILMS |
| Fecha: | Enero 2012 |
| ISSN: | 0040-6090 |
| Volumen: | 520 |
| Número: | 7 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Piezoelectric AlN; Crystal quality; AC reactive sputtering; Two-step deposition; High frequency solidly mounted resonator; Electromechanical coupling factor; Quality factor |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Tecnología Electrónica [hasta 2014] |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for electroacoustic devices operating in the super high frequency range. Superior crystal quality and low stress films with thicknesses as low as 160 nm are achieved after a radio frequency plasma treatment of the iridium electrode followed by a two-step alternating current reactive magnetron sputtering of an aluminum target, which promotes better conditions for the nucleation of well textured AlN films in the very first stages of growth. Solidly mounted resonators tuned around 8 GHz with effective electromechanical coupling factors of 5.8% and quality factors Q up to 900 are achieved.
Más información
| ID de Registro: | 15682 |
|---|---|
| Identificador DC: | https://oa.upm.es/15682/ |
| Identificador OAI: | oai:oa.upm.es:15682 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5486932 |
| Identificador DOI: | 10.1016/j.tsf.2011.11.007 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 16 Jun 2013 11:29 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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