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Understanding the operation of quantum dot intermediate band solar cells
Cita
Luque López, Antonio 
ORCID: https://orcid.org/0000-0002-8357-6413, García-Linares Fontes, Pablo ORCID: https://orcid.org/0000-0003-2369-3017, Antolín Fernández, Elisa ORCID: https://orcid.org/0000-0002-5220-2849, Ramiro González, Iñigo ORCID: https://orcid.org/0000-0002-9663-4002, Farmer, C.D., Hernández Martín, Estela, Tobías Galicia, Ignacio ORCID: https://orcid.org/0000-0001-6154-5870, Stanley, Colin and Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091
(2012).
Understanding the operation of quantum dot intermediate band solar cells.
"Journal of Applied Physics", v. 111
(n. 4);
pp..
ISSN 0021-8979.
https://doi.org/10.1063/1.3684968.
ORCID: https://orcid.org/0000-0002-8357-6413, García-Linares Fontes, Pablo ORCID: https://orcid.org/0000-0003-2369-3017, Antolín Fernández, Elisa ORCID: https://orcid.org/0000-0002-5220-2849, Ramiro González, Iñigo ORCID: https://orcid.org/0000-0002-9663-4002, Farmer, C.D., Hernández Martín, Estela, Tobías Galicia, Ignacio ORCID: https://orcid.org/0000-0001-6154-5870, Stanley, Colin and Martí Vega, Antonio ORCID: https://orcid.org/0000-0002-8841-7091
(2012).
Understanding the operation of quantum dot intermediate band solar cells.
"Journal of Applied Physics", v. 111
(n. 4);
pp..
ISSN 0021-8979.
https://doi.org/10.1063/1.3684968.
Descripción
| Título: | Understanding the operation of quantum dot intermediate band solar cells |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Journal of Applied Physics |
| Fecha: | Febrero 2012 |
| ISSN: | 0021-8979 |
| Volumen: | 111 |
| Número: | 4 |
| Materias: | |
| ODS: | |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to JL-VOC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures.
Más información
| ID de Registro: | 16085 |
|---|---|
| Identificador DC: | https://oa.upm.es/16085/ |
| Identificador OAI: | oai:oa.upm.es:16085 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5486998 |
| Identificador DOI: | 10.1063/1.3684968 |
| URL Oficial: | http://jap.aip.org/resource/1/japiau/v111/i4/p0445... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 01 Jul 2013 16:30 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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