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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Cita
Morales Sánchez, Francisco Miguel, Carvalho, Daniel, Ben, T., García Roja, Rafael, Molina Rubio, Sergio Ignacio, Martí Vega, Antonio 
ORCID: https://orcid.org/0000-0002-8841-7091, Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413, Staddon, Chis. R., Campion, Richard P. and Foxon, C.T.
(2012).
Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN.
"Scripta Materialia", v. 66
(n. 6);
pp. 351-354.
ISSN 1359-6462.
https://doi.org/10.1016/j.scriptamat.2011.11.025.
ORCID: https://orcid.org/0000-0002-8841-7091, Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413, Staddon, Chis. R., Campion, Richard P. and Foxon, C.T.
(2012).
Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN.
"Scripta Materialia", v. 66
(n. 6);
pp. 351-354.
ISSN 1359-6462.
https://doi.org/10.1016/j.scriptamat.2011.11.025.
Descripción
| Título: | Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Scripta Materialia |
| Fecha: | Marzo 2012 |
| ISSN: | 1359-6462 |
| Volumen: | 66 |
| Número: | 6 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Compound semiconductors (InGaAsN), Dilute arsenide, Transmission electron microscopy (TEM), X-ray diffraction (XRD) |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
FP7
211640
IBPOWER
Sin especificar
Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost
Más información
| ID de Registro: | 16097 |
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| Identificador DC: | https://oa.upm.es/16097/ |
| Identificador OAI: | oai:oa.upm.es:16097 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487055 |
| Identificador DOI: | 10.1016/j.scriptamat.2011.11.025 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 06 Jul 2013 08:25 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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