Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

Morales Sánchez, Francisco Miguel and Carvalho, Daniel and Ben, T. and García Roja, Rafael and Molina Rubio, Sergio Ignacio and Martí Vega, Antonio and Luque López, Antonio and Staddon, Chis. R. and Campion, Richard P. and Foxon, C.T. (2012). Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN. "Scripta Materialia", v. 66 (n. 6); pp. 351-354. ISSN 1359-6462. https://doi.org/10.1016/j.scriptamat.2011.11.025.

Description

Title: Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Author/s:
  • Morales Sánchez, Francisco Miguel
  • Carvalho, Daniel
  • Ben, T.
  • García Roja, Rafael
  • Molina Rubio, Sergio Ignacio
  • Martí Vega, Antonio
  • Luque López, Antonio
  • Staddon, Chis. R.
  • Campion, Richard P.
  • Foxon, C.T.
Item Type: Article
Título de Revista/Publicación: Scripta Materialia
Date: March 2012
ISSN: 1359-6462
Volume: 66
Subjects:
Freetext Keywords: Compound semiconductors (InGaAsN), Dilute arsenide, Transmission electron microscopy (TEM), X-ray diffraction (XRD)
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 menor que y menor que 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.

Funding Projects

TypeCodeAcronymLeaderTitle
FP7211640IBPOWERUnspecifiedIntermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

More information

Item ID: 16097
DC Identifier: http://oa.upm.es/16097/
OAI Identifier: oai:oa.upm.es:16097
DOI: 10.1016/j.scriptamat.2011.11.025
Official URL: http://www.sciencedirect.com/science/article/pii/S1359646211007184
Deposited by: Memoria Investigacion
Deposited on: 06 Jul 2013 08:25
Last Modified: 31 Oct 2014 11:14
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