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ORCID: https://orcid.org/0000-0001-9721-1549
(2012).
Electronic property analysis of O-doped Cu3SbS3.
"Solar Energy Materials and Solar Cells", v. 104
;
pp. 180-184.
ISSN 0927-0248.
https://doi.org/10.1016/j.solmat.2012.05.013.
| Título: | Electronic property analysis of O-doped Cu3SbS3 |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Solar Energy Materials and Solar Cells |
| Fecha: | Septiembre 2012 |
| ISSN: | 0927-0248 |
| Volumen: | 104 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Ionization levels; Electronic structure; Semiconductors; Impurities; Photovoltaics |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Electrónica Física |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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The ternary Cu-Sb-S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange-correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications.
| ID de Registro: | 16128 |
|---|---|
| Identificador DC: | https://oa.upm.es/16128/ |
| Identificador OAI: | oai:oa.upm.es:16128 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487557 |
| Identificador DOI: | 10.1016/j.solmat.2012.05.013 |
| URL Oficial: | http://www.sciencedirect.com/science/article/pii/S... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 06 Jul 2013 11:19 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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