Electronic property analysis of O-doped Cu3SbS3

Tablero Crespo, César ORCID: https://orcid.org/0000-0001-9721-1549 (2012). Electronic property analysis of O-doped Cu3SbS3. "Solar Energy Materials and Solar Cells", v. 104 ; pp. 180-184. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2012.05.013.

Descripción

Título: Electronic property analysis of O-doped Cu3SbS3
Autor/es:
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: Septiembre 2012
ISSN: 0927-0248
Volumen: 104
Materias:
ODS:
Palabras Clave Informales: Ionization levels; Electronic structure; Semiconductors; Impurities; Photovoltaics
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The ternary Cu-Sb-S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange-correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications.

Más información

ID de Registro: 16128
Identificador DC: https://oa.upm.es/16128/
Identificador OAI: oai:oa.upm.es:16128
URL Portal Científico: https://portalcientifico.upm.es/es/ipublic/item/5487557
Identificador DOI: 10.1016/j.solmat.2012.05.013
URL Oficial: http://www.sciencedirect.com/science/article/pii/S...
Depositado por: Memoria Investigacion
Depositado el: 06 Jul 2013 11:19
Ultima Modificación: 12 Nov 2025 00:00