Electronic property analysis of O-doped Cu3SbS3

Tablero Crespo, César (2012). Electronic property analysis of O-doped Cu3SbS3. "Solar Energy Materials and Solar Cells", v. 104 ; pp. 180-184. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2012.05.013.

Description

Title: Electronic property analysis of O-doped Cu3SbS3
Author/s:
  • Tablero Crespo, César
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: September 2012
ISSN: 0927-0248
Volume: 104
Subjects:
Freetext Keywords: Ionization levels; Electronic structure; Semiconductors; Impurities; Photovoltaics
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The ternary Cu-Sb-S semiconductors are considered to be sustainable and potential alternative absorber materials in thin film photovoltaic applications. In these compounds, several phases may coexist, albeit in different proportions depending on experimental growth conditions. Additionally, the photovoltaic efficiency could be increased with isoelectronic doping. In this work we analyze the electronic properties of O-doped Cu3SbS3 in two structures: the wittichenite and the skinnerite. We use first-principles within the density functional formalism with two different exchange-correlation potentials. In addition, we estimate the potential of these compounds for photovoltaic applications.

More information

Item ID: 16128
DC Identifier: http://oa.upm.es/16128/
OAI Identifier: oai:oa.upm.es:16128
DOI: 10.1016/j.solmat.2012.05.013
Official URL: http://www.sciencedirect.com/science/article/pii/S0927024812002383
Deposited by: Memoria Investigacion
Deposited on: 06 Jul 2013 11:19
Last Modified: 02 Oct 2014 22:56
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