Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology

Urbańczyk, Adam and Nötzel, R. (2012). Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology. "Journal of Applied Physics", v. 112 (n. 12); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4768914.

Description

Title: Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology
Author/s:
  • Urbańczyk, Adam
  • Nötzel, R.
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: December 2012
ISSN: 0021-8979
Volume: 112
Subjects:
Freetext Keywords: Gallium arsenide, III-V semiconductors, indium compounds, molecular beam epitaxial growth, nanostructured materials, plasmonics, semiconductor quantum dots, silver
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.

More information

Item ID: 16129
DC Identifier: http://oa.upm.es/16129/
OAI Identifier: oai:oa.upm.es:16129
DOI: 10.1063/1.4768914
Official URL: http://jap.aip.org/resource/1/japiau/v112/i12/p124302_s1?ver=pdfcov
Deposited by: Memoria Investigacion
Deposited on: 20 Jul 2013 08:52
Last Modified: 21 Apr 2016 16:27
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