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| Título: | Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology |
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| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Journal of Applied Physics |
| Fecha: | Diciembre 2012 |
| ISSN: | 0021-8979 |
| Volumen: | 112 |
| Número: | 12 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | Gallium arsenide, III-V semiconductors, indium compounds, molecular beam epitaxial growth, nanostructured materials, plasmonics, semiconductor quantum dots, silver |
| Escuela: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Departamento: | Otro |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
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We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.
| ID de Registro: | 16129 |
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| Identificador DC: | https://oa.upm.es/16129/ |
| Identificador OAI: | oai:oa.upm.es:16129 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487887 |
| Identificador DOI: | 10.1063/1.4768914 |
| URL Oficial: | http://jap.aip.org/resource/1/japiau/v112/i12/p124... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 20 Jul 2013 08:52 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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