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Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology
Citation
Urbańczyk, Adam and Nötzel, R. (2012). Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology. "Journal of Applied Physics", v. 112 (n. 12); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4768914.
Description
| Title: | Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Journal of Applied Physics |
| Date: | December 2012 |
| ISSN: | 0021-8979 |
| Volume: | 112 |
| Subjects: | |
| Freetext Keywords: | Gallium arsenide, III-V semiconductors, indium compounds, molecular beam epitaxial growth, nanostructured materials, plasmonics, semiconductor quantum dots, silver |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.
More information
| Item ID: | 16129 |
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| DC Identifier: | http://oa.upm.es/16129/ |
| OAI Identifier: | oai:oa.upm.es:16129 |
| DOI: | 10.1063/1.4768914 |
| Official URL: | http://jap.aip.org/resource/1/japiau/v112/i12/p124302_s1?ver=pdfcov |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 20 Jul 2013 08:52 |
| Last Modified: | 21 Apr 2016 16:27 |
