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Urbańczyk, Adam and Nötzel, R. (2012). Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology. "Journal of Applied Physics", v. 112 (n. 12); pp.. ISSN 0021-8979. https://doi.org/10.1063/1.4768914.
Title: | Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Journal of Applied Physics |
Date: | December 2012 |
ISSN: | 0021-8979 |
Volume: | 112 |
Subjects: | |
Freetext Keywords: | Gallium arsenide, III-V semiconductors, indium compounds, molecular beam epitaxial growth, nanostructured materials, plasmonics, semiconductor quantum dots, silver |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.
Item ID: | 16129 |
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DC Identifier: | http://oa.upm.es/16129/ |
OAI Identifier: | oai:oa.upm.es:16129 |
DOI: | 10.1063/1.4768914 |
Official URL: | http://jap.aip.org/resource/1/japiau/v112/i12/p124302_s1?ver=pdfcov |
Deposited by: | Memoria Investigacion |
Deposited on: | 20 Jul 2013 08:52 |
Last Modified: | 21 Apr 2016 16:27 |