Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission

Albert, Steven and Bengoechea Encabo, Ana and Sánchez García, Miguel Angel and Barbagini, Francesca and Calleja Pardo, Enrique and Luna García de la Infanta, Esperanza and Trampert, Achim and Jahn, U. and Lefebvre, P. and López, L.L. and Estradé, S. and Rebled, J.M. and Peiró, F. and Nataf, G. and Mierry, P. de and Zuniga Perez, J. (2012). Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission. "International Journal of High Speed Electronics", v. 21 (n. 1); pp. 1250010-1250034. ISSN 0129-1564. https://doi.org/10.1142/S0129156412500103.

Description

Title: Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Sánchez García, Miguel Angel
  • Barbagini, Francesca
  • Calleja Pardo, Enrique
  • Luna García de la Infanta, Esperanza
  • Trampert, Achim
  • Jahn, U.
  • Lefebvre, P.
  • López, L.L.
  • Estradé, S.
  • Rebled, J.M.
  • Peiró, F.
  • Nataf, G.
  • Mierry, P. de
  • Zuniga Perez, J.
Item Type: Article
Título de Revista/Publicación: International Journal of High Speed Electronics
Date: 2012
ISSN: 0129-1564
Volume: 21
Subjects:
Freetext Keywords: Nanorods, GaN, InGaN, SAG, white light
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into selfassembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations

More information

Item ID: 16336
DC Identifier: http://oa.upm.es/16336/
OAI Identifier: oai:oa.upm.es:16336
DOI: 10.1142/S0129156412500103
Official URL: http://www.worldscientific.com/doi/pdf/10.1142/S0129156412500103
Deposited by: Memoria Investigacion
Deposited on: 13 Jul 2013 11:54
Last Modified: 21 Apr 2016 16:38
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