E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

Barbagini, Francesca; Bengoechea Encabo, Ana; Albert, Steven; Lefebvre, P.; Martinez Rodrigo, Javier; Sánchez García, Miguel Angel; Trampert, Achim y Calleja Pardo, Enrique (2012). E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods. "Microelectronic Engineering", v. 98 ; pp. 374-377. ISSN 0167-9317. https://doi.org/10.1016/j.mee.2012.07.024.

Descripción

Título: E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
Autor/es:
  • Barbagini, Francesca
  • Bengoechea Encabo, Ana
  • Albert, Steven
  • Lefebvre, P.
  • Martinez Rodrigo, Javier
  • Sánchez García, Miguel Angel
  • Trampert, Achim
  • Calleja Pardo, Enrique
Tipo de Documento: Artículo
Título de Revista/Publicación: Microelectronic Engineering
Fecha: Octubre 2012
Volumen: 98
Materias:
Palabras Clave Informales: E-beam lithography, Nitride nanorods, Ordered growth
Escuela: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Departamento: Otro
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.

Más información

ID de Registro: 16338
Identificador DC: http://oa.upm.es/16338/
Identificador OAI: oai:oa.upm.es:16338
Identificador DOI: 10.1016/j.mee.2012.07.024
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0167931712003061
Depositado por: Memoria Investigacion
Depositado el: 23 Jul 2013 17:06
Ultima Modificación: 01 Nov 2014 23:56
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