Citation
Barbagini, Francesca and Bengoechea Encabo, Ana and Albert, Steven and Lefebvre, P. and Martinez Rodrigo, Javier and Sánchez García, Miguel Angel and Trampert, Achim and Calleja Pardo, Enrique
(2012).
E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods.
"Microelectronic Engineering", v. 98
;
pp. 374-377.
ISSN 0167-9317.
https://doi.org/10.1016/j.mee.2012.07.024.
Abstract
E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.
