Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence

Eljarrat, A. and Estradé, S. and Gacevic, Zarko and Fernández-Garrido, Sergio and Calleja Pardo, Enrique and Magén, C. and Peiró, F. (2012). Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence. "Microscopy and Microanalysis", v. 18 ; pp. 1143-1154. ISSN 1431-9276. https://doi.org/10.1017/S1431927612001328.

Description

Title: Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence
Author/s:
  • Eljarrat, A.
  • Estradé, S.
  • Gacevic, Zarko
  • Fernández-Garrido, Sergio
  • Calleja Pardo, Enrique
  • Magén, C.
  • Peiró, F.
Item Type: Article
Título de Revista/Publicación: Microscopy and Microanalysis
Date: 2012
ISSN: 1431-9276
Volume: 18
Subjects:
Freetext Keywords: VEELS, optical properties, III-V nitrides, Kramers-Kronig analysis, band gap
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[img]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (3MB) | Preview

Abstract

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.

More information

Item ID: 16339
DC Identifier: http://oa.upm.es/16339/
OAI Identifier: oai:oa.upm.es:16339
DOI: 10.1017/S1431927612001328
Deposited by: Memoria Investigacion
Deposited on: 13 Jul 2013 12:27
Last Modified: 21 Apr 2016 16:38
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM