Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

Fernández de los Reyes, Daniel and González Robledo, David and Ulloa Herrero, José María and Sales Lerida, David and Domínguez Blanco, Lara and Mayoral García, Álvaro and Hierro Cano, Adrián (2012). Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots. "Nanoscale Research Letters", v. 2012 (n. 7); pp. 653-655. ISSN 1931-7573. https://doi.org/10.1186/1556-276X-7-653.

Description

Title: Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
Author/s:
  • Fernández de los Reyes, Daniel
  • González Robledo, David
  • Ulloa Herrero, José María
  • Sales Lerida, David
  • Domínguez Blanco, Lara
  • Mayoral García, Álvaro
  • Hierro Cano, Adrián
Item Type: Article
Título de Revista/Publicación: Nanoscale Research Letters
Date: 27 November 2012
ISSN: 1931-7573
Volume: 2012
Subjects:
Freetext Keywords: III-V quantum dots, GaAsSb, N incorporation, Sb distribution, Strain state
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.

More information

Item ID: 16344
DC Identifier: http://oa.upm.es/16344/
OAI Identifier: oai:oa.upm.es:16344
DOI: 10.1186/1556-276X-7-653
Official URL: http://www.nanoscalereslett.com/content/7/1/653
Deposited by: Memoria Investigacion
Deposited on: 14 Jul 2013 07:35
Last Modified: 21 Apr 2016 16:39
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