High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

Ulloa Herrero, José María and Llorens, J.M. and Alén Millán, Benito and Reyes, D.F. and Sales, D.L. and Gonzalez, D. and Hierro Cano, Adrián (2012). High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing. "Applied Physics Letters", v. 101 (n. 25); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.4773008.

Description

Title: High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Author/s:
  • Ulloa Herrero, José María
  • Llorens, J.M.
  • Alén Millán, Benito
  • Reyes, D.F.
  • Sales, D.L.
  • Gonzalez, D.
  • Hierro Cano, Adrián
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: December 2012
ISSN: 0003-6951
Volume: 101
Subjects:
Freetext Keywords: gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, radiative lifetimes, rapid thermal annealing, semiconductor quantum dots
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

More information

Item ID: 16349
DC Identifier: http://oa.upm.es/16349/
OAI Identifier: oai:oa.upm.es:16349
DOI: 10.1063/1.4773008
Official URL: http://apl.aip.org/resource/1/applab/v101/i25/p253112_s1?ver=pdfcov
Deposited by: Memoria Investigacion
Deposited on: 27 Jul 2013 10:40
Last Modified: 21 Apr 2016 16:39
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