Mechanical Characterization of Multicrystalline Silicon Substrates for Solar Cell Applications

Tejado Garrido, Elena María ORCID: https://orcid.org/0000-0002-5240-6702, Orellana Pérez, T., Pastor Caño, Jose Ygnacio ORCID: https://orcid.org/0000-0003-3561-5999, Funke, V.C. and Fütterer, W. (2012). Mechanical Characterization of Multicrystalline Silicon Substrates for Solar Cell Applications. En: "XXIX Encuentro del Grupo Español de Fractura", 21 de marzo de 2012 a 23 de marzo de 2012, Bilbao (España).

Descripción

Título: Mechanical Characterization of Multicrystalline Silicon Substrates for Solar Cell Applications
Autor/es:
Tipo de Documento: Ponencia en Congreso o Jornada (Artículo)
Título del Evento: XXIX Encuentro del Grupo Español de Fractura
Fechas del Evento: 21 de marzo de 2012 a 23 de marzo de 2012
Lugar del Evento: Bilbao (España)
Título del Libro: -
Fecha: 2012
Materias:
ODS:
Escuela: E.T.S.I. Caminos, Canales y Puertos (UPM)
Departamento: Ciencia de los Materiales
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

The possibility of using more economical silicon feedstock, i.e. as support for epitaxial solar cells, is of interest when the cost reduction and the properties are attractive. We have investigated the mechanical behaviour of two blocks of upgraded metallurgical silicon, which is known to present high content of impurities even after being purified by the directional solidification process. These impurities are mainly metals like Al and silicon compounds. Thus, it is important to characterize their effect in order to improve cell performance and to ensure the survival of the wafers throughout the solar value chain. Microstructure and mechanical properties were studied by means of ring on ring and three point bending tests. Additionally, elastic modulus and fracture toughness were measured. These results showed that it is possible to obtain marked improvements in toughness when impurities act as microscopic internal crack arrestors. However, the same impurities can be initiators of damage due to residual thermal stresses introduced during the crystallization process.

Más información

ID de Registro: 16416
Identificador DC: https://oa.upm.es/16416/
Identificador OAI: oai:oa.upm.es:16416
URL Oficial: http://gef2012.mondragon.edu/es
Depositado por: Memoria Investigacion
Depositado el: 15 Ene 2014 16:33
Ultima Modificación: 04 Jun 2025 06:09