Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

Albert, Steven and Bengoechea Encabo, Ana and Lefebvre, P. and Barbagini, Francesca and Sánchez García, Miguel Angel and Calleja Pardo, Enrique and Jahn, U. and Trampert, Achim (2012). Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. "Applied Physics Letters", v. 100 (n. 23); pp. 1-4. ISSN 0022-0248. https://doi.org/10.1063/1.4728115.

Description

Title: Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Lefebvre, P.
  • Barbagini, Francesca
  • Sánchez García, Miguel Angel
  • Calleja Pardo, Enrique
  • Jahn, U.
  • Trampert, Achim
Item Type: Article
Título de Revista/Publicación: Applied Physics Letters
Date: June 2012
Volume: 100
Subjects:
Freetext Keywords: gallium compounds, III-V semiconductors, indium compounds, nanofabrication, nanostructured materials, photoluminescence, semiconductor growth, wide band gap semiconductors
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.

More information

Item ID: 16459
DC Identifier: http://oa.upm.es/16459/
OAI Identifier: oai:oa.upm.es:16459
DOI: 10.1063/1.4728115
Official URL: http://apl.aip.org/resource/1/applab/v100/i23/p231906_s1
Deposited by: Memoria Investigacion
Deposited on: 16 Jul 2013 18:01
Last Modified: 21 Apr 2016 16:45
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