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Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
Cita
Albert, Steven, Bengoechea Encabo, Ana, Lefebvre, P., Barbagini, Francesca, Sánchez García, Miguel Angel 
ORCID: https://orcid.org/0000-0002-1494-9351, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Jahn, U. and Trampert, Achim
(2012).
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.
"Applied Physics Letters", v. 100
(n. 23);
pp. 1-4.
ISSN 0022-0248.
https://doi.org/10.1063/1.4728115.
ORCID: https://orcid.org/0000-0002-1494-9351, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Jahn, U. and Trampert, Achim
(2012).
Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.
"Applied Physics Letters", v. 100
(n. 23);
pp. 1-4.
ISSN 0022-0248.
https://doi.org/10.1063/1.4728115.
Descripción
| Título: | Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies |
|---|---|
| Autor/es: |
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| Tipo de Documento: | Artículo |
| Título de Revista/Publicación: | Applied Physics Letters |
| Fecha: | Junio 2012 |
| ISSN: | 0022-0248 |
| Volumen: | 100 |
| Número: | 23 |
| Materias: | |
| ODS: | |
| Palabras Clave Informales: | gallium compounds, III-V semiconductors, indium compounds, nanofabrication, nanostructured materials, photoluminescence, semiconductor growth, wide band gap semiconductors |
| Escuela: | E.T.S.I. Telecomunicación (UPM) |
| Departamento: | Ingeniería Electrónica |
| Licencias Creative Commons: | Reconocimiento - Sin obra derivada - No comercial |
Resumen
This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.
Proyectos asociados
Tipo
Código
Acrónimo
Responsable
Título
FP7
SMASH
228999
Sin especificar
Sin especificar
Comunidad de Madrid
S2009/ESP-1503
Sin especificar
Sin especificar
Sin especificar
Gobierno de España
MAT2011-26703
Sin especificar
Sin especificar
Sin especificar
Más información
| ID de Registro: | 16459 |
|---|---|
| Identificador DC: | https://oa.upm.es/16459/ |
| Identificador OAI: | oai:oa.upm.es:16459 |
| URL Portal Científico: | https://portalcientifico.upm.es/es/ipublic/item/5487319 |
| Identificador DOI: | 10.1063/1.4728115 |
| URL Oficial: | http://apl.aip.org/resource/1/applab/v100/i23/p231... |
| Depositado por: | Memoria Investigacion |
| Depositado el: | 16 Jul 2013 18:01 |
| Ultima Modificación: | 12 Nov 2025 00:00 |
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