Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Garcia Tabares Valdivieso, Elisa; Martín Martín, Diego; García Vara, Iván y Rey-Stolle Prado, Ignacio (2013). Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells. "Solar Energy Materials and Solar Cells", v. 116 ; pp. 61-67. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2013.04.003.

Descripción

Título: Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells
Autor/es:
  • Garcia Tabares Valdivieso, Elisa
  • Martín Martín, Diego
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
Tipo de Documento: Artículo
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Fecha: Septiembre 2013
Volumen: 116
Materias:
Palabras Clave Informales: Multi-junction solar cell; III–V on Si; MOVPE; Emitter formation; Phosphorus diffusion
Escuela: Instituto de Energía Solar (IES) (UPM)
Departamento: Electrónica Física
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

Texto completo

[img]
Vista Previa
PDF (Document Portable Format) - Se necesita un visor de ficheros PDF, como GSview, Xpdf o Adobe Acrobat Reader
Descargar (5MB) | Vista Previa

Resumen

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

Más información

ID de Registro: 16736
Identificador DC: http://oa.upm.es/16736/
Identificador OAI: oai:oa.upm.es:16736
Identificador DOI: 10.1016/j.solmat.2013.04.003
URL Oficial: http://www.sciencedirect.com/science/article/pii/S0927024813001682
Depositado por: Memoria Investigacion
Depositado el: 07 Ago 2013 17:20
Ultima Modificación: 01 Oct 2015 22:56
  • Open Access
  • Open Access
  • Sherpa-Romeo
    Compruebe si la revista anglosajona en la que ha publicado un artículo permite también su publicación en abierto.
  • Dulcinea
    Compruebe si la revista española en la que ha publicado un artículo permite también su publicación en abierto.
  • Recolecta
  • e-ciencia
  • Observatorio I+D+i UPM
  • OpenCourseWare UPM