Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Garcia Tabares Valdivieso, Elisa and Martín Martín, Diego and García Vara, Iván and Rey-Stolle Prado, Ignacio (2013). Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells. "Solar Energy Materials and Solar Cells", v. 116 ; pp. 61-67. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2013.04.003.

Description

Title: Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells
Author/s:
  • Garcia Tabares Valdivieso, Elisa
  • Martín Martín, Diego
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: September 2013
ISSN: 0927-0248
Volume: 116
Subjects:
Freetext Keywords: Multi-junction solar cell; III–V on Si; MOVPE; Emitter formation; Phosphorus diffusion
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

More information

Item ID: 16736
DC Identifier: http://oa.upm.es/16736/
OAI Identifier: oai:oa.upm.es:16736
DOI: 10.1016/j.solmat.2013.04.003
Official URL: http://www.sciencedirect.com/science/article/pii/S0927024813001682
Deposited by: Memoria Investigacion
Deposited on: 07 Aug 2013 17:20
Last Modified: 01 Oct 2015 22:56
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